STGP10H60DF ,IGBT Transistor, IGBT Module - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
66 points
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Part NoSTGP10H60DF
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ManufacturerST Microelectronics
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ChipWorker Part#CW23526608
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CategoryIGBT Transistor, IGBT Module
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PackageTO-220-3
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DescriptionTrans IGBT Chip N-CH 600V 20A 115000mW 3Pin(3+Tab) TO-220 Tube
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 2.37
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STGP10H60DF Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | STGP10H60DF | |
| Manufacturer | ST Microelectronics | |
| ChipWorker Part# | CW23526608 | |
| Category | IGBT Transistor, IGBT Module | |
| Documentation | Datasheet | |
| Mounting Style | Through Hole | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-220-3 | |
| Number of Positions | 3 Position | |
| Power Dissipation | 115 W | |
| Breakdown Voltage (Collector to Emitter) | 600 V | |
| Reverse recovery time | 107 ns | |
| Input Power (Max) | 115 W | |
| Operating Temperature (Max) | 175 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 115 W | |
| expand all | ||
| Size-Length | 10.4 mm | |
| Size-Width | 4.6 mm | |
| Size-Height | 15.75 mm | |
| Operating Temperature | -55℃ ~ 175℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tube | |
| RoHS | Compliant with Exemption | |
| Lead-Free Status | Lead Free | |
| ECCN Code | EAR99 |
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Product Description
- Use the STGP10H60DF IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 115000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
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