STGP8NC60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP8NC60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW18862996
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 7A 65000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP8NC60KD Specifications

Attribute	Attribute Value

Part Number	STGP8NC60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW18862996
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	23.5 ns
Input Power (Max)	65 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	65000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure STGP8NC60KD IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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