STGW20NC60VD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW20NC60VD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1417339
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 60A, 2.5V, 200W, 600V, TO-247, 3Pins
Documentation

Datasheet

STGW20NC60VD Global Supplier

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STGW20NC60VD Specifications

Attribute	Attribute Value

Part Number	STGW20NC60VD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1417339
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	30.0 A
Power Rating	200 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Rise Time	11.5 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	44 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STGW20NC60VD is a 600V very fast IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. It is suitable for use with high frequency inverters, UPS, motor drive, SMPS and PFC in both hard switch and resonant topologies.
High current capability
High frequency operation up to 50KHz
Very soft ultra fast recovery anti-parallel diode
±20V Gate to emitter voltage
0.63°C/W IGBT thermal resistance, junction to case
1.5°C/W IGBT thermal resistance, junction to case
50°C/W Thermal resistance, junction to ambient

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