LF411CN - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LF411CN
Manufacturer

TI
ChipWorker Part#

CW33548992
Category

Operational Amplifier, OP Amp IC
Package

DIP-8
Description

Operational Amplifier, Single, 1 Amplifier, 4MHz, 15V/µs, 10V to 36V, DIP, 8Pins
Documentation

Datasheet

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LF411CN Specifications

Attribute	Attribute Value

Part Number	LF411CN
Manufacturer	TI
ChipWorker Part#	CW33548992
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Supply Voltage (DC)	44.0 V
Supply Current	1.8 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Common Mode Rejection Ratio	70 dB
Input Offset Drift	7.00 µV/K
Bandwidth	4 MHz
Slew Rate	15.0 V/μs
Gain Bandwidth Product	4 MHz
Input Offset Voltage	800 µV
Input Bias Current	50 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	4 MHz
Supply Voltage	10V ~ 36V
Supply Voltage (Max)	36 V
Supply Voltage (Min)	10 V
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Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC

Product Description

The LF411CN is a low offset low drift JFET input Operational Amplifier which requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411 is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs. This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.
0.5mV Maximum internally trimmed offset voltage
7µV/°C Typical input offset voltage drift
50pA Low input bias current
0.01pA/√Hz Low input noise current
10¹²R High input impedance
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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