STGW40H60DLFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW40H60DLFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW52803063
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 600V 40A 283000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW40H60DLFB Specifications

Attribute	Attribute Value

Part Number	STGW40H60DLFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW52803063
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	283 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	283 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	283 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	PB free
ECCN Code	EAR99

Product Description

The STGW40H60DLFB IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.

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