STGW45HF60WD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW45HF60WD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10569503
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 70A 250000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW45HF60WD Specifications

Attribute	Attribute Value

Part Number	STGW45HF60WD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10569503
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	250 W
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	55 ns
Input Power (Max)	250 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	24.45 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGW45HF60WD IGBT transistor from STMicroelectronics. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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