STP14NF12 ,MOSFET, MOSFET Transistor - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
104 points
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Part NoSTP14NF12
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ManufacturerST Microelectronics
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ChipWorker Part#CW44009336
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionN-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STRIPFET POWER MOSFET
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DocumentationDatasheet
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Ships fromMoscow
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Наличие183160 pcs In Stock
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Estimated Price$ 0.26
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STP14NF12 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | STP14NF12 | |
| Manufacturer | ST Microelectronics | |
| ChipWorker Part# | CW44009336 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Through Hole | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-220-3 | |
| Number of Positions | 3 Position | |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω | |
| Polarity | N-Channel | |
| Power Dissipation | 60 W | |
| Threshold Voltage | 3 V | |
| Drain to Source Voltage (Vds) | 120 V | |
| Continuous Drain Current (Ids) | 7.00 A | |
| Rise Time | 25 ns | |
| Input Capacitance (Ciss) | 460pF @25V(Vds) | |
| Fall Time | 8 ns | |
| Operating Temperature (Max) | 175 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 60W (Tc) | |
| expand all | ||
| Size-Length | 10.4 mm | |
| Size-Width | 4.6 mm | |
| Size-Height | 15.75 mm | |
| Operating Temperature | -55℃ ~ 175℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Rail, Tube | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/12/17 |
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Product Description
- The STP14NF12 is a 120V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
- Exceptional dv/dt capability
- Application oriented characterization
Delivery
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