STP24N60DM2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP24N60DM2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW26846273
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 600V 18A
Documentation

Datasheet

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STP24N60DM2 Specifications

Attribute	Attribute Value

Part Number	STP24N60DM2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW26846273
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.175 Ω
Polarity	N-CH
Power Dissipation	150 W
Threshold Voltage	4 V
Input Capacitance	1055 pF
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	18A
Rise Time	8.7 ns
Input Capacitance (Ciss)	1055pF @100V(Vds)
Input Power (Max)	150 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
HK STC License	NLR

Product Description

Create an effective common drain amplifier using this STP24N60DM2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 150000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii plus technology.

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