STP4N150 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTP4N150
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ManufacturerST Microelectronics
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ChipWorker Part#CW4382080
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionN-channel 1500V - 5Ω - 4A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3pF
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DocumentationDatasheet
Payment Methods and Delivery
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STP4N150 Global Supplier
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STP4N150 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STP4N150 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW4382080 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 1.50 kV |
| Current Rating | 4.00 A |
| Power Rating | 160 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.30 nF |
| Gate Charge | 50.0 nC |
| Drain to Source Voltage (Vds) | 1.5 kV |
| Breakdown Voltage (Drain to Source) | 1500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| expand all | |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
| HK STC License | NLR |
Product Description
- The STP4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
- 100% Avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
Delivery
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Ordering Information
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These terms and conditions are for reference only. The actual terms and conditions are subject to the sales staff's quotation.
- Please check the technical specifications of the products when ordering.
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- Invoices are issued in the currency specified, but payment is made in Russian rubles at the exchange rate on the day of payment.
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- Delivery will take between 1 to 2 weeks after the shipment is sent to your country.
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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