STPSC10065D - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC10065D
Manufacturer

ST Microelectronics
ChipWorker Part#

CW84565867
Package

TO-220-2
Description

Diode Schottky Si 650V 10A 2Pin(2+Tab) TO-220AC Tube
Documentation

Datasheet

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STPSC10065D Specifications

Attribute	Attribute Value

Part Number	STPSC10065D
Manufacturer	ST Microelectronics
ChipWorker Part#	CW84565867
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.45 V
Reverse recovery time	0 ns
Forward Current	10000 mA
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Material	Silicon
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status
ECCN Code	EAR99

Product Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant component

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