STPSC10H065DI - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC10H065DI
Manufacturer

ST Microelectronics
ChipWorker Part#

CW80874903
Category

TVS Diode
Package

TO-220-2
Description

Diode Schottky 650V 10A 2Pin TO-220AC Tube
Documentation

Datasheet

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STPSC10H065DI Specifications

Attribute	Attribute Value

Part Number	STPSC10H065DI
Manufacturer	ST Microelectronics
ChipWorker Part#	CW80874903
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Number of Positions	2 Position
Forward Voltage	1.75V @10A
Forward Current	10000 mA
Max Forward Surge Current (Ifsm)	90 A
Maximum Forward Voltage (Max)	1.75 V
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Insulated package: TO-220AC Ins
Insulated voltage: 2500 VRMS sine
Typical package capacitance: 7 pF

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