STPSC1206D - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC1206D
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5036393
Category

Schottky Diode
Package

TO-220-2
Description

STMICROELECTRONICS STPSC1206D Silicon Carbide Schottky Diode, SIC, 600V Series, Single, 600V, 12A, 12NC, TO-220AC
Documentation

Datasheet

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STPSC1206D Specifications

Attribute	Attribute Value

Part Number	STPSC1206D
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5036393
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.7V @12A
Thermal Resistance	1.75 ℃/W
Reverse recovery time	0 ns
Forward Current	12 A
Max Forward Surge Current (Ifsm)	200 A
Maximum Forward Voltage (Max)	1.7V @12A
Forward Current (Max)	12000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of the temperature.
Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.
**Key Features**
No reverse recovery
Dedicated to PFC boost diode
Switching behavior independent of temperature

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