STS4DNF60L - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STS4DNF60L
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1014263
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SO N-CH 60V 4A
Documentation

Datasheet

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STS4DNF60L Specifications

Attribute	Attribute Value

Part Number	STS4DNF60L
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1014263
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	60.0 V
Current Rating	4.00 A
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.045 Ω
Polarity	N-Channel, Dual N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±15.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	28 ns
Input Capacitance (Ciss)	1030pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.25 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STS4DNF60L is a N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Standard outline for easy automated surface-mount assembly
Low threshold gate drive

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