TIP115 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP115
Manufacturer

ST Microelectronics
ChipWorker Part#

CW6507586
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington PNP 60V 2A 2000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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TIP115 Specifications

Attribute	Attribute Value

Part Number	TIP115
Manufacturer	ST Microelectronics
ChipWorker Part#	CW6507586
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-60.0 V
Current Rating	-2.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The TIP115 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications.
Integrated anti-parallel collector-emitter diode

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