TIP147 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP147
Manufacturer

ST Microelectronics
ChipWorker Part#

CW184604
Category

BJT Transistor, BJT
Package

TO-247-3
Description

Trans Darlington PNP 100V 10A 125000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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TIP147 Specifications

Attribute	Attribute Value

Part Number	TIP147
Manufacturer	ST Microelectronics
ChipWorker Part#	CW184604
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	-100 V
Current Rating	-10.0 A
Power Rating	80 W
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	125 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	500
Input Power (Max)	125 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The TIP147 is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very low saturation voltage. Designed for use in linear and switching industrial applications.
Monolithic Darlington configuration
Integrated anti-parallel collector-emitter diode
0.5A Base current
1°C/W Junction-to-case thermal resistance

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