TIP29C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP29C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW7431844
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 100V 1A 2000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

TIP29C Global Supplier

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TIP29C Specifications

Attribute	Attribute Value

Part Number	TIP29C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW7431844
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	15 @1A, 4V
hFE Max	75
Input Power (Max)	2 W
DC Current Gain (hFE)	75
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The TIP29C is a 100V NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Well-controlled hFE parameter for increased reliability
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 5V)

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