TLC271ID ,Operational Amplifier, OP Amp IC - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

144 points

Part No

TLC271ID
Manufacturer

TI
ChipWorker Part#

CW11181061
Category

Operational Amplifier, OP Amp IC
Package

SOIC-8
Description

Operational Amplifier, Single, 1 Amplifier, 1.7MHz, 3.6V/µs, 4V to 16V, SOIC, 8Pins
Documentation

Datasheet
Ships from

Moscow
Наличие

638 pcs In Stock
Estimated Price

$ 0.6

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TLC271ID Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	TLC271ID
Manufacturer	TI
ChipWorker Part#	CW11181061
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Operating Voltage	3V ~ 16V
Output Current	≤30 mA
Supply Current	950 µA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Power Dissipation	0.725 W
Common Mode Rejection Ratio	65 dB
Input Offset Drift	1.80 µV/K
Bandwidth	1.7 MHz
Slew Rate	3.60 V/μs
Gain Bandwidth Product	1.7 MHz
Input Offset Voltage	1.1 mV
Input Bias Current	0.7 pA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Gain Bandwidth	2.2 MHz
Power Dissipation (Max)	725 mW
Minimum CMRR Range	65 dB
Supply Voltage	4V ~ 16V
	expand all
Size-Length	4.9 mm
Size-Width	3.91 mm
Size-Height	1.58 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

The TLC271ID is a single LinCMOS™ programmable Operational Amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and AC performance for a particular application. This device uses Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. Using the bias-select option, this device can be programmed to span a wide range of applications that previously required BiFET, NFET or bipolar technology. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
Single-supply operation
Common-mode input voltage range extends below the negative rail
Output voltage range includes negative rail
ESD-protection circuitry
Designed-in latch-up immunity
Input offset voltage drift - Typically 0.1µV/month, including the first 30 days
25nV/√Hz at f=1kHz (high-bias mode) Typically low noise
10¹²R Typical high input impedance
Green product and no Sb/Br

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