TPS1100D - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPS1100D
Manufacturer

TI
ChipWorker Part#

CW22392432
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 15V 1.6A
Documentation

Datasheet

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TPS1100D Specifications

Attribute	Attribute Value

Part Number	TPS1100D
Manufacturer	TI
ChipWorker Part#	CW22392432
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	-15.0 V
Current Rating	-1.60 A
Output Voltage	-15.0 V
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	P-Channel
Power Dissipation	791 mW
Drain to Source Voltage (Vds)	15 V
Continuous Drain Current (Ids)	-1.60 A
Rise Time	10 ns
Input Power (Max)	791 mW
Fall Time	2 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	791mW (Ta)
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
HK STC License	NLR

Product Description

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.
Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
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