TX810IRHHT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TX810IRHHT
Manufacturer

TI
ChipWorker Part#

CW8484196
Category

Analog Switch Ic, Analog Switch Multiplexer
Package

VQFN-36
Description

TEXAS INSTRUMENTS TX810IRHHT Analog Switch, SPST, 8Channels, 67Ω, 2.5V to 5V, VQFN, 36Pins
Documentation

Datasheet

TX810IRHHT Global Supplier

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TX810IRHHT Specifications

Attribute	Attribute Value

Part Number	TX810IRHHT
Manufacturer	TI
ChipWorker Part#	CW8484196
Category	Analog Switch Ic, Analog Switch Multiplexer
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	36 Pin
Case/Package	VQFN-36
Number of Outputs	8 Output
Number of Channels	8 Channel
Number of Positions	36 Position
Power Dissipation	0.644 W
Bandwidth	140 MHz
Number of Inputs	8 Input
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
3dB Bandwidth	140 MHz
Power Dissipation (Max)	644 mW
Supply Voltage	2.5V ~ 5V
Supply Voltage (Min)	2.5 V
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Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TX810IRHHT is a 8-channel programmable Transmit/Receive Switch provides an integrated solution for a wide range of ultrasound applications. The internal diodes limit the output voltage when high voltage transmitter signals are applied to the input. While the insertion loss of TX810 is minimized during receive mode. Unlike conventional T/R switches, the TX810 contains a 3-bit interface used to program bias current from 7 to 0mA for different performance and power requirements. When the it bias current is set as 0mA (i.e., high-impedance mode), the device is configured as power-down mode. In the high-impedance mode, TX810 does not add additional load to high-voltage transmitters. In addition, the device can wake up from power-down mode in less than 1µs. With these advanced programmability features, significant power saving can be achieved in systems.
Flexible programmability
Easy power-up/down control
Fast wake up time
Dual supply operation
Optimized insertion loss
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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