2N3501 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N3501
Manufacturer

Microsemi
ChipWorker Part#

CW42630533
Category

BJT Transistor, BJT
Package

TO-205
Description

2N3501 Series 150V 300mA Through Hole NPN Silicon Transistor - TO-39-3
Documentation

Datasheet

2N3501 Global Supplier

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2N3501 Specifications

Attribute	Attribute Value

Part Number	2N3501
Manufacturer	Microsemi
ChipWorker Part#	CW42630533
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-205
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	150 V
hFE Min	100 @150mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

Implement this versatile NPN 2N3501 GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.

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