2N5195G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5195G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1977833
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225 PNP 80V 4A
Documentation

Datasheet

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2N5195G Specifications

Attribute	Attribute Value

Part Number	2N5195G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1977833
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Frequency	2 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	3.12℃/W (RθJC)
Continuous Collector Current	4A
hFE Min	20 @1.5A, 2V
hFE Max	80
Input Power (Max)	40 W
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40 W
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits.
Complement to NPN 2N5191 and 2N5192

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