2N6042 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N6042
Manufacturer

ON Semiconductor
ChipWorker Part#

CW89470070
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220-3 PNP 100V 8A
Documentation

Datasheet

2N6042 Global Supplier

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2N6042 Specifications

Attribute	Attribute Value

Part Number	2N6042
Manufacturer	ON Semiconductor
ChipWorker Part#	CW89470070
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Voltage Rating (DC)	-100 V
Current Rating	8.00 A
Polarity	PNP
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	8A
hFE Min	1000 @3A, 4V
hFE Max	20000
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
Minimum Packing Quantity	50
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.
Features
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High DC Current Gain -
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc -
VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44
VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available

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