2SB1561T100Q - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2SB1561T100Q
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW34524223
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

MPT PNP 60V 2A
Documentation

Datasheet

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2SB1561T100Q Specifications

Attribute	Attribute Value

Part Number	2SB1561T100Q
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW34524223
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Frequency	200 MHz
Voltage Rating (DC)	-60.0 V
Current Rating	-2.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	2 W
Gain Bandwidth Product	200 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	2A
hFE Min	120
hFE Max	270
Input Power (Max)	2 W
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	4.5 mm
Size-Width	2.5 mm
Size-Height	1.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Features
1) Low saturation voltage , typically VCE (sat)= −0.15V at IC/ IB= −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SD2391.

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