APT50GT60BRDQ2G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

APT50GT60BRDQ2G
Manufacturer

Microsemi
ChipWorker Part#

CW68898596
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 110A 446000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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APT50GT60BRDQ2G Specifications

Attribute	Attribute Value

Part Number	APT50GT60BRDQ2G
Manufacturer	Microsemi
ChipWorker Part#	CW68898596
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	110 A
Power Dissipation	446000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	446 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	446000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This fast-switching APT50GT60BRDQ2G IGBT transistor from Microsemi will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 446000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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