IRFP4468PBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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187 points

Part No

IRFP4468PBF
Manufacturer

Infineon
ChipWorker Part#

CW855919
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 100V 290A
Documentation

Datasheet
Ships from

Moscow
Наличие

1659 pcs In Stock
Estimated Price

$ 0.66

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IRFP4468PBF Specifications

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Attribute	Attribute Value

Part Number	IRFP4468PBF
Manufacturer	Infineon
ChipWorker Part#	CW855919
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	520 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0026 Ω
Polarity	N-CH
Power Dissipation	520 W
Threshold Voltage	2 V
Input Capacitance	19860 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	290A
Rise Time	230 ns
Input Capacitance (Ciss)	19860pF @50V(Vds)
Input Power (Max)	520 W
Fall Time	260 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	520W (Tc)
	expand all
Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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