BCR523E6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCR523E6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW24298724
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

SOT-23 NPN 50V 500mA
Documentation

Datasheet

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BCR523E6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	BCR523E6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW24298724
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	50.0 V
Current Rating	500 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	330 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	500mA
hFE Min	70 @50mA, 5V
Input Power (Max)	330 mW
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	100 MHz
Power Dissipation (Max)	330 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.9 mm
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BCR 523 E6327 is a NPN silicon digital Bipolar Transistor suitable for switching circuit, inverter and interface circuit driver circuit applications.
Built-in bias resistor (R1 = 1kR, R2 = 10kR)

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