BD135 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD135
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1653717
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 45V 1.5A 1250mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD135 Specifications

Attribute	Attribute Value

Part Number	BD135
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1653717
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	50 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.25 W
Breakdown Voltage (Collector to Emitter)	45 V
hFE Min	40 @150mA, 2V
hFE Max	250
Input Power (Max)	1.25 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
Complement to BD136
0.5A Base current
10°C/W Junction-to-case thermal resistance
100°C/W Junction-to-ambient thermal resistance

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