BD441G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD441G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13948793
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225 NPN 80V 4A
Documentation

Datasheet

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BD441G Specifications

Attribute	Attribute Value

Part Number	BD441G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13948793
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Frequency	3 MHz
Voltage Rating (DC)	80.0 V
Current Rating	4.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	36 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	4A
hFE Min	40 @500mA, 1V
Input Power (Max)	36 W
DC Current Gain (hFE)	15
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	36000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

4.0 AMPERES POWER TRANSISTORS NPN SILICON
This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications.
Features
•Complementary Types are BD438 and BD442
•These Devices are Pb−Free and are RoHS Compliant

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