BD676G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD676G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12142296
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 PNP 45V 4A
Documentation

Datasheet

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BD676G Specifications

Attribute	Attribute Value

Part Number	BD676G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12142296
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-45.0 V
Current Rating	-4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	4A
hFE Min	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD676G is a -45V Silicon PNP Bipolar Darlington Plastic Medium Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction.
High DC current gain
Collector-base voltage (Vcbo = 45V)
Emitter-base voltage (Vcbo = 5V)

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