BDW46G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW46G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12148196
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 80V 15A
Documentation

Datasheet

BDW46G Global Supplier

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BDW46G Specifications

Attribute	Attribute Value

Part Number	BDW46G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12148196
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-80.0 V
Current Rating	-15.0 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	85 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	15A
hFE Min	1000 @5A, 4V
Input Power (Max)	85 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	85000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.
Features
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High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) BDW46
VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built-In Base Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available

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