BSS123 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSS123
Manufacturer

ON Semiconductor
ChipWorker Part#

CW36000
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
Documentation

Datasheet

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BSS123 Specifications

Attribute	Attribute Value

Part Number	BSS123
Manufacturer	ON Semiconductor
ChipWorker Part#	CW36000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Power Dissipation	360 mW
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	100 V
Rise Time	9 ns
Input Capacitance (Ciss)	73pF @25V(Vds)
Input Power (Max)	360 mW
Fall Time	2.4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360 mW
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Size-Length	2.92 mm
Size-Width	1.3 mm
Size-Height	0.93 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
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0.17 A, 100 V, RDS(ON) = 6 Ω @ VGS = 10 V
0.17 A, 100 V, RDS(ON) = 10 Ω @ VGS = 4.5 V
High Density Cell Design for Extremely Low RDS(ON)
Rugged and Reliable
Compact Industry Standard SOT-23 Surface Mount Package

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