BU406G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BU406G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6679835
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 200V 7A
Documentation

Datasheet

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BU406G Specifications

Attribute	Attribute Value

Part Number	BU406G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6679835
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	10 MHz
Voltage Rating (DC)	200 V
Current Rating	7.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	60 W
Breakdown Voltage (Collector to Emitter)	200 V
Continuous Collector Current	7A
Input Power (Max)	60 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60000 mW
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Size-Width	4.82 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS
These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s.
Features
• High Voltage: VCEV = 330 or 400 V
• Fast Switching Speed: tf = 750 ns (max)
• Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
• Pb−Free Packages are Available

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