CSD85301Q2 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD85301Q2
Manufacturer

TI
ChipWorker Part#

CW18839097
Category

MOSFET, MOSFET Transistor
Package

WSON-FET-6
Description

WSON N-CH 20V 5A
Documentation

Datasheet

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CSD85301Q2 Specifications

Attribute	Attribute Value

Part Number	CSD85301Q2
Manufacturer	TI
ChipWorker Part#	CW18839097
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	WSON-FET-6
Number of Channels	2 Channel
Drain to Source Resistance (on) (Rds)	27 mΩ
Polarity	N-CH
Power Dissipation	2.3 W
Threshold Voltage	600 mV, 600 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	±20 V
Continuous Drain Current (Ids)	5A
Rise Time	26 ns
Input Capacitance (Ciss)	469pF @10V(Vds)
Input Power (Max)	2.3 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2300 mW
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Size-Length	2 mm
Size-Width	2 mm
Size-Height	0.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 × 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

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