FDN337N ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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168 points

Part No

FDN337N
Manufacturer

Fairchild
ChipWorker Part#

CW14872359
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

FAIRCHILD SEMICONDUCTOR FDN337N MOSFET Transistor, N Channel, 2.2A, 30V, 0.054Ω, 4.5V, 700mV
Documentation

Datasheet
Ships from

Moscow
Наличие

18000 pcs In Stock
Estimated Price

$ 0.76

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FDN337N Specifications

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Attribute	Attribute Value

Part Number	FDN337N
Manufacturer	Fairchild
ChipWorker Part#	CW14872359
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	30.0 V
Current Rating	2.20 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.054 Ω
Polarity	N-Channel
Power Dissipation	500 mW
Threshold Voltage	700 mV
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	2.20 A
Rise Time	10 ns
Input Capacitance (Ciss)	300pF @10V(Vds)
Input Power (Max)	460 mW
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500mW (Ta)
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
High density cell design for extremely low Rds(on)
Exceptional on resistance and maximum DC current capability
Drain to source voltage (Vds) of 30V
Gate to source voltage of ±8V
Low on state resistance of 65mohm at Vgs 4.5V
Continuous drain current of 2.2A
Maximum power dissipation of 500mW
Operating junction temperature range from -55°C to 150°C

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