FDN359AN - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDN359AN
Manufacturer

Fairchild
ChipWorker Part#

CW7850265
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

FAIRCHILD SEMICONDUCTOR FDN359AN MOSFET Transistor, N Channel, 2.7A, 30V, 46mohm, 10V, 1.6V
Documentation

Datasheet

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FDN359AN Specifications

Attribute	Attribute Value

Part Number	FDN359AN
Manufacturer	Fairchild
ChipWorker Part#	CW7850265
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	30.0 V
Current Rating	2.70 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	46 mΩ
Polarity	N-Channel
Power Dissipation	500 mW
Threshold Voltage	1.6 V
Input Capacitance	480 pF
Gate Charge	5.00 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.70 A
Rise Time	13 ns
Input Capacitance (Ciss)	480pF @10V(Vds)
Input Power (Max)	460 mW
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.5 W
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Very fast switching
Low gate charge

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