FDS6680AS ,MOSFET, MOSFET Transistor - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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133 points
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Part NoFDS6680AS
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ManufacturerFairchild
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ChipWorker Part#CW14808404
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CategoryMOSFET, MOSFET Transistor
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PackageSOIC-8
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DescriptionTrans MOSFET N-CH 30V 11.5A 8Pin SOIC N T/R
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DocumentationDatasheet
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Ships fromMoscow
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Наличие3237 pcs In Stock
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Estimated Price$ 0.3
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FDS6680AS Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | FDS6680AS | |
| Manufacturer | Fairchild | |
| ChipWorker Part# | CW14808404 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 8 Pin | |
| Case/Package | SOIC-8 | |
| Voltage Rating (DC) | -30.0 V | |
| Current Rating | -11.5 A | |
| Number of Positions | 8 Position | |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω | |
| Polarity | N-Channel | |
| Power Dissipation | 2.5 mW | |
| Threshold Voltage | 1.5 V | |
| Input Capacitance | 1.24 nF | |
| Gate Charge | 22.0 nC | |
| Drain to Source Voltage (Vds) | 30 V | |
| Breakdown Voltage (Drain to Source) | 30.0 V | |
| Continuous Drain Current (Ids) | 11.5 A | |
| Rise Time | 5.00 ns | |
| Input Capacitance (Ciss) | 1240pF @15V(Vds) | |
| Input Power (Max) | 1 W | |
| Fall Time | 11 ns | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 2.5 W | |
| expand all | ||
| Size-Length | 5 mm | |
| Size-Width | 4 mm | |
| Size-Height | 1.5 mm | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/06/15 | |
| ECCN Code | EAR99 |
Similar & Replacement Parts
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Product Description
- The FDS6680AS is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. This product is general usage and suitable for many different applications.
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
Delivery
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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