FDS6912A - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6912A
Manufacturer

Fairchild
ChipWorker Part#

CW13199926
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 6A 8Pin SOIC N T/R
Documentation

Datasheet

FDS6912A Global Supplier

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FDS6912A Specifications

Attribute	Attribute Value

Part Number	FDS6912A
Manufacturer	Fairchild
ChipWorker Part#	CW13199926
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	6 A
Power Rating	1.6 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-Channel, Dual N-Channel
Power Dissipation	1.6 W
Threshold Voltage	1.9 V
Input Capacitance	575 pF
Gate Charge	5.80 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	6.00 A
Rise Time	5 ns
Input Capacitance (Ciss)	575pF @15V(Vds)
Input Power (Max)	900 mW
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6912A is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS (ON)
High power and current handling capability
±20V Gate source voltage (VGSS)
78°C/W Thermal resistance, junction to ambient
40°C/W Thermal resistance, junction to case

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