FF900R12IE4 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FF900R12IE4
Manufacturer

Infineon
ChipWorker Part#

CW9234630
Category

IGBT Transistor, IGBT Module
Package

AG-PRIME2-1
Description

Trans IGBT Module N-CH 1200V 900A 5100000mW 10Pin PRIME2-1 Tray
Documentation

Datasheet

FF900R12IE4 Global Supplier

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FF900R12IE4 Specifications

Attribute	Attribute Value

Part Number	FF900R12IE4
Manufacturer	Infineon
ChipWorker Part#	CW9234630
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	10 Pin
Case/Package	AG-PRIME2-1
Power Rating	5.1 kW
Number of Positions	10 Position
Polarity	N-Channel
Power Dissipation	5.1 kW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	54nF @25V
Input Power (Max)	5.1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	510 kW
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Size-Length	172 mm
Size-Width	89 mm
Size-Height	38 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Extended Operation Temperature T(tvj op)
High DC Stability
High Short Circuit Capability, Self Limiting Short Circuit Current
Low Switching Losses
Unbeatable Robustness
V(cesat) with positive Temperature Coefficient
4kV AC 1min Insulation
Package with CTI > 400
High Creepage and Clearance Distances
High Power and Thermal Cycling Capability
Substrate for Low Thermal Resistance
UL recognized
Benefits:
High Power Density
Standardized housing

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