FQB33N10TM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQB33N10TM
Manufacturer

Fairchild
ChipWorker Part#

CW13906160
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR FQB33N10TM MOSFET Transistor, N Channel, 30A, 100V, 0.04Ω, 10V, 4V
Documentation

Datasheet

FQB33N10TM Global Supplier

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FQB33N10TM Specifications

Attribute	Attribute Value

Part Number	FQB33N10TM
Manufacturer	Fairchild
ChipWorker Part#	CW13906160
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	100 V
Current Rating	33.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-Channel
Power Dissipation	127 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	33.0 A
Rise Time	195 ns
Input Capacitance (Ciss)	1500pF @25V(Vds)
Input Power (Max)	3.75 W
Fall Time	110 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.75 W
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQB33N10TM is a 100V N-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
Low gate charge (typical 38nC)
Low Crss (typical 62pF)
100% Avalanche tested
±25V Gate source voltage
40°C/W Thermal resistance, junction to ambient
1.18°C/W Thermal resistance, junction to case

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