FZT653TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FZT653TA
Manufacturer

Diodes
ChipWorker Part#

CW6100823
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans GP BJT NPN 100V 2A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FZT653TA Specifications

Attribute	Attribute Value

Part Number	FZT653TA
Manufacturer	Diodes
ChipWorker Part#	CW6100823
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	175 MHz
Voltage Rating (DC)	100 V
Current Rating	2.00 A
Power Rating	2 W
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	2A
hFE Min	100 @500mA, 2V
Input Power (Max)	2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Jump-start your electronic circuit design with this versatile NPN FZT653TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

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