IKB10N60T - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKB10N60T
Manufacturer

Infineon
ChipWorker Part#

CW89480966
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

INFINEON IKB10N60T IGBT Single Transistor, 10A, 2.05V, 110W, 600V, TO-263, 3Pins
Documentation

Datasheet

IKB10N60T Global Supplier

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IKB10N60T Specifications

Attribute	Attribute Value

Part Number	IKB10N60T
Manufacturer	Infineon
ChipWorker Part#	CW89480966
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	110 W
Number of Positions	3 Position
Power Dissipation	110 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	115 ns
Input Power (Max)	110 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	110 W
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2018/06/27

Product Description

The IKB10N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
Very soft, fast recovery anti-parallel emitter controlled HE diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency - Low conduction and switching losses
High device reliability
5µs Short-circuit withstand time
Green product
Halogen-free

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