IPD053N08N3GATMA1 ,MOSFET, MOSFET Transistor - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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130 points
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Part NoIPD053N08N3GATMA1
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ManufacturerInfineon
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ChipWorker Part#CW3143396
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CategoryMOSFET, MOSFET Transistor
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PackageTO-252-3
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DescriptionDPAK N-CH 80V 90A
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DocumentationDatasheet
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Ships fromMoscow
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Наличие17160 pcs In Stock
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Estimated Price$ 1
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IPD053N08N3GATMA1 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | IPD053N08N3GATMA1 | |
| Manufacturer | Infineon | |
| ChipWorker Part# | CW3143396 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-252-3 | |
| Drain to Source Resistance (on) (Rds) | 0.0044 Ω | |
| Polarity | N-Channel | |
| Power Dissipation | 150 W | |
| Threshold Voltage | 2.8 V | |
| Input Capacitance | 3570 pF | |
| Drain to Source Voltage (Vds) | 80 V | |
| Continuous Drain Current (Ids) | 90A | |
| Rise Time | 66 ns | |
| Input Capacitance (Ciss) | 4750pF @40V(Vds) | |
| Input Power (Max) | 150 W | |
| Fall Time | 10 ns | |
| Operating Temperature (Max) | 175 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 150W (Tc) | |
| expand all | ||
| Operating Temperature | -55℃ ~ 175℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance Edition | 2015/12/17 |
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Product Description
- The IPD053N08N3 G is a N-channel OptiMOS™ 3 Power Transistor with superior thermal resistance, excellent gate charge x R DS(ON) product (FOM) and superior thermal resistance. Optimized technology for DC/DC converters. Ideal for high-frequency switching and synchronous rectification.
- Dual sided cooling
- Very low on resistance
- 100% Avalanche tested
- Low parasitic inductance
- Halogen-free
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