IPW65R190CFD ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

48 points

Part No

IPW65R190CFD
Manufacturer

Infineon
ChipWorker Part#

CW55333503
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 650V 17.5A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 3.17

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IPW65R190CFD Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	IPW65R190CFD
Manufacturer	Infineon
ChipWorker Part#	CW55333503
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.445 Ω
Polarity	N-Channel
Power Dissipation	34 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	17.5A
Rise Time	8.4 ns
Input Capacitance (Ciss)	1850pF @100V(Vds)
Fall Time	6.4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	151W (Tc)
	expand all
Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

Summary of Features:
650V technology with integrated fast body diode
Limited voltage overshoot during hard commutation
Significant Q g reduction compared to 600V CFD technology
Tighter R DS(ON) max to R DS(on) typ window
Easy to design-in
Lower price compared to 600V CFD technology
Benefits:
Low switching losses due to low Q rr at repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Q oss
Reduced turn on and turn of delay times
Outstanding CoolMOS™ quality
Target Applications:
Telecom
Server
Solar
HID lamp ballast
LED lighting
eMobility

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