IRF1010EPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF1010EPBF
Manufacturer

Infineon
ChipWorker Part#

CW1901471
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-220AB N-CH 60V 84A
Documentation

Datasheet

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IRF1010EPBF Specifications

Attribute	Attribute Value

Part Number	IRF1010EPBF
Manufacturer	Infineon
ChipWorker Part#	CW1901471
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	170 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.012 Ω
Polarity	N-Channel
Power Dissipation	170 W
Threshold Voltage	4 V
Input Capacitance	3210pF @25V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	84A
Rise Time	78 ns
Input Capacitance (Ciss)	3210pF @25V(Vds)
Input Power (Max)	200 W
Fall Time	53 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET from International rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Industry-leading quality
Planar MOSFET technology
±20V Gate to source voltage
1.4W/°C Linear derating factor
50A Avalanche current (IAR)
0.75°C/W Thermal resistance, junction to case
62°C/W Thermal resistance, junction to ambient

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