IRF5210SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5210SPBF
Manufacturer

Infineon
ChipWorker Part#

CW10381204
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 100V 38A
Documentation

Datasheet

IRF5210SPBF Global Supplier

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IRF5210SPBF Specifications

Attribute	Attribute Value

Part Number	IRF5210SPBF
Manufacturer	Infineon
ChipWorker Part#	CW10381204
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	3.8 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	P-CH
Power Dissipation	200 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	38A
Rise Time	63 ns
Input Capacitance (Ciss)	2780pF @25V(Vds)
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	4.69 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF5210SPBF is a -100V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of other applications.
Advanced process technology
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
150°C Operating temperature

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