IRF7831PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7831PBF
Manufacturer

Infineon
ChipWorker Part#

CW12721714
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 21A
Documentation

Datasheet

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IRF7831PBF Specifications

Attribute	Attribute Value

Part Number	IRF7831PBF
Manufacturer	Infineon
ChipWorker Part#	CW12721714
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0036 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2.35 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	21A
Rise Time	10 ns
Input Capacitance (Ciss)	6240pF @15V(Vds)
Fall Time	5.3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRF7831PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
100% Rg tested

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