IRF8252PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF8252PBF
Manufacturer

Infineon
ChipWorker Part#

CW48027593
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 25V 25A
Documentation

Datasheet

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IRF8252PBF Specifications

Attribute	Attribute Value

Part Number	IRF8252PBF
Manufacturer	Infineon
ChipWorker Part#	CW48027593
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.002 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	25 V
Continuous Drain Current (Ids)	25A
Rise Time	32 ns
Input Capacitance (Ciss)	5305pF @13V(Vds)
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF8252PBF is a HEXFET® single N-channel Power MOSFET housed in an industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications. It is also suitable for battery protection, high side and low side load switch.
Silicon technology
Very low gate charge
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Ultra-low gate impedance
Fully characterized avalanche voltage and current
100% Rg tested
Low thermal resistance
Halogen-free
20V VGS Maximum gate rating

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