IRF9130 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF9130
Manufacturer

Infineon
ChipWorker Part#

CW53610359
Category

MOSFET, MOSFET Transistor
Package

TO-204
Description

Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
Documentation

Datasheet

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IRF9130 Specifications

Attribute	Attribute Value

Part Number	IRF9130
Manufacturer	Infineon
ChipWorker Part#	CW53610359
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Number of Pins	2 Pin
Case/Package	TO-204
Number of Positions	2 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Power Dissipation	75 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Input Capacitance (Ciss)	860pF @25V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Product Lifecycle Status	Active
RoHS	Non-Compliant
Lead-Free Status	Lead Free

Product Description

The IRF9130 is a P-channel HEXFET® Power MOSFET with low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Hermetically sealed
Dynamic dv/dt rating
Fully avalanche rated
Hermetically sealed
Ease of paralleling

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