IRFB31N20DPBF ,MOSFET, MOSFET Transistor - International Rectifier

The pictures are for reference only, and the specific specifications can be found in the product manual.

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105 points

Part No

IRFB31N20DPBF
Manufacturer

International Rectifier
ChipWorker Part#

CW89912679
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1

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IRFB31N20DPBF Specifications

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Attribute	Attribute Value

Part Number	IRFB31N20DPBF
Manufacturer	International Rectifier
ChipWorker Part#	CW89912679
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	200 V
Current Rating	31.0 A
Drain to Source Resistance (on) (Rds)	0.082 Ω
Polarity	N-Channel
Power Dissipation	3.1 W
Part Family	IRFB31N20D
Input Capacitance	2370pF @25V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	31.0 A
Rise Time	38.0 ns
Thermal Resistance	0.75℃/W (RθJC)
Input Capacitance (Ciss)	2370pF @25V(Vds)
Input Power (Max)	3.1 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	10.54 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

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HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

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