IRFR3607PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR3607PBF
Manufacturer

Infineon
ChipWorker Part#

CW12099830
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 75V 80A
Documentation

Datasheet

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IRFR3607PBF Specifications

Attribute	Attribute Value

Part Number	IRFR3607PBF
Manufacturer	Infineon
ChipWorker Part#	CW12099830
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.00734 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	75 V
Continuous Drain Current (Ids)	80A
Rise Time	110 ns
Input Capacitance (Ciss)	3070pF @50V(Vds)
Input Power (Max)	140 W
Fall Time	96 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR3607PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dV/dt ruggedness
Enhanced body diode dV/dt and di/dt capability

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